Growth and Processing
The MBE group in Semiconductor Physics at Cambridge will collaborate with other groups within the QIP IRC and will carry out:
(1) The design and MBE growth of wafers containing random arrays of InAs quantum dots emitting at specific wavelengths with low luminescent background.
(2) The design and MBE growth of wafers containing deliberately positioned InAs quantum dots – this involves:
(a) Pre-patterning of wafers,
(b) Insitu decontamination with hydrogen radicals,
(c) Growth of positioned InAs quantum dots,
(3) The design and growth of wafers as substrates for carbon nanotube experiments.
(4) Processing of wafers into a range of device structures.
For further information contact David Ritchie